![]() Nevertheless, there are ways to achieve efficient scaling. They are vertical devices rather than planar, and they do not scale the way CMOS devices do. Power devices are structured differently than CMOS FETs. Package inductance and electrical resistance contribute directly to the conduction and switching losses. ![]() Power switches are very efficient, but even the most efficient switches have operational tradeoffs. The higher operating temperature of SiC devices and price parity with silicon systems has made SiC the material of choice for the on-board charging, traction inversion, and DC-to-DC conversion in battery EVs. In contrast, automotive applications require power losses to be kept to an absolute minimum. ![]() In smart power applications, efficiency is the most important selection factor. This change is fueling a shift from silicon MOSFETs and IGBTs to those based on silicon carbide (SiC) and gallium nitride (GaN), whose wide bandgaps enable higher switching power characteristics, higher operating frequency, and lower RDS(on), in dramatically smaller footprints. Today’s voltage classes range from 40V up to 150V. As recently as a decade ago, voltage ratings of 30V and 40V for computing drove were the norm. The market for new power packaging (including test) is between 20% to 25% of the total semiconductor power market.ĭevices are grouped into low-, medium-, and high-voltage classes, which goes hand-in-hand with low, medium, and high current. In fact, McKinsey estimates a CAGR of 26% between 20 for silicon carbide power devices alone.ĭiscrete power devices and power modules are used in transportation, power grids, energy storage, computing, 5G infrastructure, chargers, and industrial drives, among other things. Power electronics are ubiquitous in our lives, and the push toward net zero is expected to double the market from 2022 levels of $22 billion to $44 billion in only a few years (2025/2026). Power devices are transistors and diodes that start, stop, or adjust the power in electronic systems. “We include test and burn-in services for all our power solutions, which gives customers a turnkey solution.” “Amkor is one of the first OSATs to provide silicon carbide-based packaging to electric vehicle manufacturers,” said Sivakumar Mohandass, corporate vice president for Amkor‘s Wirebond and Power Business Unit. PQFN also is compatible with GaN, and it has lead-free plating and halogen-free mold compound, a wettable flank for automotive, and a dual heat sink option.Īmkor uses multiple SiC-compatible processes, as well, which include volume SiC dicing, heavy gauge wirebonding, and testing and burn-in services that meet automotive standards. This is due to its compact size (3 x 3mm to 8 x 8mm), low parasitics for very low turn-on resistance, great thermal performance, and numerous multi-die, multi-clip, and wire variations. The power quad flat no-lead (PQFN) package is one of the most popular choices today, according to Amkor. Overall solutions include effective thermal management via single- or dual-sided cooling, and multi-die integration in framed or molded modules. An exposed source tab can be flush with the heat sink to boost device current capability. That approach also can improve switching performance due to the smaller gate loop in the SMT. Topside-cooled SMT can provide lower thermal resistance because the drain tab is connected directly to the heat sink. Leading companies supply literally hundreds of discrete power devices, but some of the most common include through-hole packages, such as TO-247 and TO-220 with long silver leads, as well as surface-mount (SMT) components with leads such as D2PAK, DPAK, SO-8, and leadless (TOLL), PQFN and CSPs. “As we make advancements in the silicon itself, the packaging starts to become more and more important,” said Brian LaValle, director of Mid-Power Voltage MOSFETs at Infineon, in a recent webinar.Īt high power and high currents, power modules are offered in discrete packages and integrated modules, providing competitive advantage for manufacturers depending on the device specifications and use conditions. With the global shift toward faster switching frequencies and greater power densities, there is a related shift in materials used for substrates, die attach, wirebonding, and system cooling. Packaging is playing an increasingly critical role in the transition to higher power densities, enabling more efficient power supplies, power delivery, and faster conversion, as well as increased reliability. The power semiconductor market is poised for remarkable growth in the next several years, fueled by the adoption of electric vehicles and renewable energy, but it also driving big changes in the packaging needed to protect and connect these devices. ![]()
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